Demonstration of Low Voltage and Functionally Complete Logic Operations Using Body-Biased Complementary and Ultra-Thin ALN Piezoelectric Mechanical Switches
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Mechanical Engineering
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This paper reports, for the first time, on the demonstration of low voltage and functionally complete logic elements (NAND and NOR) implemented by using body-biased complementary and ultra-thin (250 nm thick) Aluminum Nitride (AlN) based piezoelectric mechanical switches. This work presents, firstly, the importance of scaling AlN films for the demonstration of ultra-thin AlN switches and, secondly, the implementation of a new actuation scheme based on body biasing to lower the switch threshold voltage. Four of these ultra-thin switches were connected together to synthesize functionally complete MEMS logic gates (NAND and NOR) with a ± 2V swing and a body-bias voltage < 8 V.
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Suggested Citation: Nipun Sinha, Timothy S. Jones, Zhijun Guo, and Gianluca Piazza. "DEMONSTRATION OF LOW VOLTAGE AND FUNCTIONALLY COMPLETE LOGIC OPERATIONS USING BODY-BIASED COMPLEMENTARY AND ULTRA-THIN ALN PIEZOELECTRIC MECHANICAL SWITCHES" Proceedings of 2010 MicroElectroMEchanical Systems Conference (MEMS 2010) (2010). ©2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.