Optimization of Bilayer Lift-Off Process to Enable the Gap Size of 1μm Using LOR 3A and S1813
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Lift-off process
Bilayer lift-off process
Photolithography
Patterning
S1813
LOR 3A
Development
Biochemical and Biomolecular Engineering
Biological Engineering
Biomaterials
Biomedical Engineering and Bioengineering
Chemical Engineering
Electrical and Computer Engineering
Electrical and Electronics
Electromagnetics and Photonics
Electro-Mechanical Systems
Electronic Devices and Semiconductor Manufacturing
Engineering
Engineering Education
Engineering Science and Materials
Materials Science and Engineering
Mechanical Engineering
Mechanics of Materials
Nanotechnology Fabrication
Other Engineering Science and Materials
Semiconductor and Optical Materials
VLSI and Circuits, Embedded and Hardware Systems
Bilayer lift-off process
Photolithography
Patterning
S1813
LOR 3A
Development
Biochemical and Biomolecular Engineering
Biological Engineering
Biomaterials
Biomedical Engineering and Bioengineering
Chemical Engineering
Electrical and Computer Engineering
Electrical and Electronics
Electromagnetics and Photonics
Electro-Mechanical Systems
Electronic Devices and Semiconductor Manufacturing
Engineering
Engineering Education
Engineering Science and Materials
Materials Science and Engineering
Mechanical Engineering
Mechanics of Materials
Nanotechnology Fabrication
Other Engineering Science and Materials
Semiconductor and Optical Materials
VLSI and Circuits, Embedded and Hardware Systems
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Abstract
Bilayer lift-off process for 1μm feature size is demonstrated using LOR 3A and S1813 photoresist. The thickness of photoresists was fixed, whereas development time is varied. The process was further investigated by measuring the undercut depth and undercut rate by scanning electron microscopy. An optimized and reproducible recipe is provided.
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2021-01-29