Effect of Developer Temperature on Photoresist Contrast in Grayscale Lithography
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Photoresist
SPR 220
contrast
developer
temperature
grayscale
lithography
Biochemical and Biomolecular Engineering
Bioelectrical and Neuroengineering
Biomaterials
Biomechanical Engineering
Biomedical
Biomedical Devices and Instrumentation
Biomedical Engineering and Bioengineering
Chemical Engineering
Electrical and Computer Engineering
Electrical and Electronics
Electromagnetics and Photonics
Electro-Mechanical Systems
Electronic Devices and Semiconductor Manufacturing
Engineering Education
Engineering Mechanics
Engineering Science and Materials
Materials Science and Engineering
Mechanical Engineering
Mechanics of Materials
Nanotechnology Fabrication
Polymer and Organic Materials
Process Control and Systems
Semiconductor and Optical Materials
VLSI and Circuits, Embedded and Hardware Systems
SPR 220
contrast
developer
temperature
grayscale
lithography
Biochemical and Biomolecular Engineering
Bioelectrical and Neuroengineering
Biomaterials
Biomechanical Engineering
Biomedical
Biomedical Devices and Instrumentation
Biomedical Engineering and Bioengineering
Chemical Engineering
Electrical and Computer Engineering
Electrical and Electronics
Electromagnetics and Photonics
Electro-Mechanical Systems
Electronic Devices and Semiconductor Manufacturing
Engineering Education
Engineering Mechanics
Engineering Science and Materials
Materials Science and Engineering
Mechanical Engineering
Mechanics of Materials
Nanotechnology Fabrication
Polymer and Organic Materials
Process Control and Systems
Semiconductor and Optical Materials
VLSI and Circuits, Embedded and Hardware Systems
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Abstract
SPR 220-3 photoresist was spin-coated onto a silicon wafer, exposed using a Heidelberg DWL66+ laserwriter at different laser powers, and developed at different temperatures. The effect of developer temperature on photoresist contrast was examined. Results show that increasing developer temperature decreased photoresist contrast and increased required dose.
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Publication date
2021-05-12