Novel Electrode Configurations in Dual-Layer Stacked and Switchable AlN Contour-Mode Resonators for Low Impedance Filter Termination and Reduced Insertion Loss
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This paper reports, for the first time, on the design and demonstration of two novel electrode configurations in dual-layer stacked Aluminum Nitride (AlN) piezoelectric contour-mode resonators to obtain low filter termination resistance (down to 300 Ω, which also results in better filter out-of-band rejection) and reduced insertion loss (IL as low as 1.6 dB) in multi-frequency (100 MHz – 1 GHz) AlN MEMS filters. The microfabrication process is fully compatible with the previously demonstrated AlN RF MEMS switches, which makes it possible to design and integrate multi-frequency switchable filter banks on a single chip.
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Suggested Citation: Chengjie Zuo, Nipun Sinha, and Gianluca Piazza. "Novel Electrode Configurations in Dual-Layer Stacked and Switchable AlN Contour-Mode Resonators for Low Impedance Filter Termination and Reduced Insertion Loss" 23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010) (2010): 719-722. ©2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.