Effect of the polar surface on GaN nanostructure growth and morphology

Wurtzite gallium nitride nanostructures were grown by thermal reaction of gallium oxide and ammonia. The resulting morphology varied depending on ammonia flow rate. At 75 sccm only nanowires were obtained, while polyhedral crystals and nanobelts were observed at 175 sccm. Scanning electron microscopy and transmission electron microscopy revealed both thin smooth and thick corrugated nanowires. The growth axes of most of the smooth ones, as well as the nanobelts, were perpendicular to the c-axis (<0001>), while the corrugated nanowires and the large polyhedra grew parallel to <0001>. We propose a model to explain these morphology variations in terms of the Ga/N ratio and the different characteristic lengths of {0001} polar surfaces in the different nanostructures.