Effect of Annealing on the Contact Resistance of Aluminum on a p-type Substrate
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Metallization
contact resistance
aluminum contacts
contact resistivity
Biochemical and Biomolecular Engineering
Bioelectrical and Neuroengineering
Biological Engineering
Biomaterials
Biomechanical Engineering
Biomedical
Biomedical Devices and Instrumentation
Electrical and Computer Engineering
Electrical and Electronics
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Electronic Devices and Semiconductor Manufacturing
Engineering Mechanics
Materials Science and Engineering
Mechanics of Materials
Metallurgy
Nanotechnology Fabrication
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Semiconductor and Optical Materials
Structural Materials
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VLSI and Circuits, Embedded and Hardware Systems
contact resistance
aluminum contacts
contact resistivity
Biochemical and Biomolecular Engineering
Bioelectrical and Neuroengineering
Biological Engineering
Biomaterials
Biomechanical Engineering
Biomedical
Biomedical Devices and Instrumentation
Electrical and Computer Engineering
Electrical and Electronics
Electro-Mechanical Systems
Electronic Devices and Semiconductor Manufacturing
Engineering Mechanics
Materials Science and Engineering
Mechanics of Materials
Metallurgy
Nanotechnology Fabrication
Other Biomedical Engineering and Bioengineering
Other Electrical and Computer Engineering
Semiconductor and Optical Materials
Structural Materials
Systems and Communications
VLSI and Circuits, Embedded and Hardware Systems
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Abstract
Aluminum contacts are widely used to form both ohmic and rectifying contacts. The process to form these contacts involves annealing, thus it is important to study the effect of annealing on the electrical properties of the contacts. Here, we present a way to measure the contact resistance of aluminum contacts formed on a p-type silicon substrate. It was found the contact resistivity decreased by an average of 18%. It was thus found that annealing at 400°C in a forming gas environment improves the electrical properties of aluminum contacts.
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2019-11-14