100 NM Thick Aluminum Nitrade Based Piezoelectric Nano Switches Exhibiting 1 MV Threshold Voltage via Body-Biasing
Related Collections
Degree type
Discipline
Subject
Mechanical Engineering
Funder
Grant number
License
Copyright date
Distributor
Related resources
Author
Contributor
Abstract
This paper reports on the first demonstration of aluminum nitride (AIN) piezoelectric logic switches that were fabricated with ultra-thin (100nm) AIN films and exhibit a 1 mV threshold voltage via the body-biasing scheme. The application of a relatively low (< 6 V) fixed potential to the body terminal of a 4-terminal switch has been cycled to > 109 cycles and, although the contact resistance was found to be high (~ 1 MΩ), the nano-films have functioned throughout to show high piezoelectric nano-film reliability.
Advisor
Date of presentation
Conference name
Conference dates
Conference location
Date Range for Data Collection (Start Date)
Date Range for Data Collection (End Date)
Digital Object Identifier
Series name and number
Volume number
Issue number
Publisher
Publisher DOI
Comments
Suggested Citation: Chengjie Zuo, Jan Van der Spiegel, and Gianluca Piazza. "1.5-GHz CMOS Voltage-Controlled Oscillator Based On Thickness-Field-Excited Piezoelectric AlN Contour-Mode MEMS Resonators" 2010 IEEE Custom Integrated Circuits Conference (CICC 2010) (2010). ©2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.