Rinaldi, MatteoZuniga, ChiaraZuo, ChengjiePiazza, Gianluca2023-05-222023-05-222010-01-012009-12-23https://repository.upenn.edu/handle/20.500.14332/33738This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh- frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contourextensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt^2, in excess of 1.5%. These devices are employed to synthesize the highest frequency MEMS filter (3.7 GHz) based on AlN contour-mode resonator technology ever reported.Super High FrequencyUltra-Thin-Film AlNNanoscaled Contour-Mode ResonatorsMEMS ResonatorsMEMS FiltersNEMSAcoustics, Dynamics, and ControlsElectrical and Computer EngineeringElectrical and ElectronicsElectro-Mechanical SystemsElectronic Devices and Semiconductor ManufacturingNanoscience and NanotechnologyNanotechnology FabricationSignal ProcessingSystems and CommunicationsSuper-High-Frequency Two-Port AlN Contour-Mode Resonators for RF ApplicationsArticle