Suh, YeonjoonWatson, George Patrick2023-05-232023-05-232021-01-292021-01-29https://repository.upenn.edu/handle/20.500.14332/45888Bilayer lift-off process for 1μm feature size is demonstrated using LOR 3A and S1813 photoresist. The thickness of photoresists was fixed, whereas development time is varied. The process was further investigated by measuring the undercut depth and undercut rate by scanning electron microscopy. An optimized and reproducible recipe is provided.Lift-off processBilayer lift-off processPhotolithographyPatterningS1813LOR 3ADevelopmentBiochemical and Biomolecular EngineeringBiological EngineeringBiomaterialsBiomedical Engineering and BioengineeringChemical EngineeringElectrical and Computer EngineeringElectrical and ElectronicsElectromagnetics and PhotonicsElectro-Mechanical SystemsElectronic Devices and Semiconductor ManufacturingEngineeringEngineering EducationEngineering Science and MaterialsMaterials Science and EngineeringMechanical EngineeringMechanics of MaterialsNanotechnology FabricationOther Engineering Science and MaterialsSemiconductor and Optical MaterialsVLSI and Circuits, Embedded and Hardware SystemsOptimization of Bilayer Lift-Off Process to Enable the Gap Size of 1μm Using LOR 3A and S1813Working Paper