Farnan, DaleWatson, George Patrick2023-05-232023-05-232021-05-122021-05-12https://repository.upenn.edu/handle/20.500.14332/45891SPR 220-3 photoresist was spin-coated onto a silicon wafer, exposed using a Heidelberg DWL66+ laserwriter at different laser powers, and developed at different temperatures. The effect of developer temperature on photoresist contrast was examined. Results show that increasing developer temperature decreased photoresist contrast and increased required dose.PhotoresistSPR 220contrastdevelopertemperaturegrayscalelithographyBiochemical and Biomolecular EngineeringBioelectrical and NeuroengineeringBiomaterialsBiomechanical EngineeringBiomedicalBiomedical Devices and InstrumentationBiomedical Engineering and BioengineeringChemical EngineeringElectrical and Computer EngineeringElectrical and ElectronicsElectromagnetics and PhotonicsElectro-Mechanical SystemsElectronic Devices and Semiconductor ManufacturingEngineering EducationEngineering MechanicsEngineering Science and MaterialsMaterials Science and EngineeringMechanical EngineeringMechanics of MaterialsNanotechnology FabricationPolymer and Organic MaterialsProcess Control and SystemsSemiconductor and Optical MaterialsVLSI and Circuits, Embedded and Hardware SystemsEffect of Developer Temperature on Photoresist Contrast in Grayscale LithographyReport