Shah, ShreyWatson, George Patrick2023-05-232023-05-232019-11-142019-11-14https://repository.upenn.edu/handle/20.500.14332/45883Aluminum contacts are widely used to form both ohmic and rectifying contacts. The process to form these contacts involves annealing, thus it is important to study the effect of annealing on the electrical properties of the contacts. Here, we present a way to measure the contact resistance of aluminum contacts formed on a p-type silicon substrate. It was found the contact resistivity decreased by an average of 18%. It was thus found that annealing at 400°C in a forming gas environment improves the electrical properties of aluminum contacts.Metallizationcontact resistancealuminum contactscontact resistivityBiochemical and Biomolecular EngineeringBioelectrical and NeuroengineeringBiological EngineeringBiomaterialsBiomechanical EngineeringBiomedicalBiomedical Devices and InstrumentationElectrical and Computer EngineeringElectrical and ElectronicsElectro-Mechanical SystemsElectronic Devices and Semiconductor ManufacturingEngineering MechanicsMaterials Science and EngineeringMechanics of MaterialsMetallurgyNanotechnology FabricationOther Biomedical Engineering and BioengineeringOther Electrical and Computer EngineeringSemiconductor and Optical MaterialsStructural MaterialsSystems and CommunicationsVLSI and Circuits, Embedded and Hardware SystemsEffect of Annealing on the Contact Resistance of Aluminum on a p-type SubstrateWorking Paper