Zhang, MeiyueWatson, Pat2023-05-232023-05-232019-03-012019-03-01https://repository.upenn.edu/handle/20.500.14332/45874Two reactive ion etching (RIE) processes were studied to show the relative etch selectivity between SiO2 and Si using two fluorocarbon gases, CF4 and CHF3. Results show that CHF3 gives better selectivity (16:1) over CF4 (1.2 :1). On the other hand, the etch rate of SiO2 of CF4 is approximately 52.8 nm/min, faster than CHF3 (32.4 nm/min).Reactive ion etchingRIESiSiO2CHF3CF4SelectivityBiomedicalBiomedical Devices and InstrumentationCeramic MaterialsElectrical and ElectronicsElectromagnetics and PhotonicsElectro-Mechanical SystemsElectronic Devices and Semiconductor ManufacturingMembrane ScienceNanotechnology FabricationOther Biomedical Engineering and BioengineeringSemiconductor and Optical MaterialsStructural MaterialsSystems and Integrative EngineeringVLSI and Circuits, Embedded and Hardware SystemsReport