Rinaldi, MatteoZuniga, ChiaraZuo, ChengjiePiazza, Gianluca2023-05-222023-05-222009-04-202009-12-23https://repository.upenn.edu/handle/20.500.14332/33740This paper reports on the design and experimental verification of a new class of thin-film (250 nm) super high frequency (SHF) laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions in order to excite a contour-extensional mode of vibration in nano features of an ultra-thin (250 nm) aluminum nitride (AlN) film. In this first demonstration two-port resonators vibrating up to 4.5 GHz were fabricated on the same die and attained electromechanical coupling, kt^2, in excess of 1.5 %. These devices were employed to synthesize the highest frequency ever reported MEMS filter (3.7 GHz) based on AlN contour-mode resonator (CMR) technology.Super High FrequencyMEMS ResonatorMEMS FilterNEMSElectrical and ElectronicsElectronic Devices and Semiconductor ManufacturingNanoscience and NanotechnologyNanotechnology FabricationPresentation