ALD deposition of SiO2 using BDEAS and Ozone precursors
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SiO2 ALD
BDEAS
Bis(diethylamino)silane
BDEAS
Bis(diethylamino)silane
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Abstract
In this report, the ALD process for deposition of SiO2 using BDEAS and O3 as precursors has been studied. The etch rates and uniformity of deposition at various temperatures are reported.
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2021-12-01