LOPEZ, GERALD G
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Publication SUSS MicroTec MA6 Gen3 – MicroChem SPR-220 7.0 Thickness vs. Dose-to-Clear and Contrast Curve Data(2016-04-27) Wood, Steven; Lopez, Gerald GThe SOP for MicroChem SPR-220 7.0 at the Quattrone Nanofabrcation Facility is provided along with thickness vs. dose-to-clear and contrast curve data. The document is intended to provide a starting point when using MicroChem SPR-220 7.0.Publication ZEP520A Contrast Curves(2016-12-16) Lopez, Gerald G.; Azadi, MohsenThis report documents the contrast curves for the ZEP520A electron beam lithography resist from ZEON Chemicals. Dilution by weight of ZEP520A vs spin speed from 1000 to 6000 rpm was generated in previous work. The aim is to provide an approximate clearing and base dose for the ZEP520A standard process at the Singh Center for Nanotechnology.Publication Heidelberg DWL66+ S1805 Contrast Curves(2016-02-04) Wood, Steven; Lopez, Gerald GAccurately gauge the optimal machine setting for MicroChem S1805 using the Heidelberg DWL 66+ and obtain contrast curves based on the 2mm and 10mm writehead.Publication CSAR 62 Contrast Curves(2017-12-21) Azadi, Mohsen; Griggs, Georgia; de Villafranca, Glen; Lopez, GeraldPublication PMMA A2 and A4 Spin Curves(2016-12-16) Lopez, Gerald G; Azadi, MohsenThis report documents the spin curves for the PMMA A2 and A4 electron beam lithography resists from MicroChem. The aim is to provide a spin curve reference for the A2 and A4 dilutions at the Singh Center for Nanotechnolgy Quattrone Nanofabrication Facility.Publication CSAR 62 Spin Curve(2018-12-21) Azadi, Mohsen; Griggs, Georgia; de Villafranca, Glen; Lopez, GeraldPublication Characterization of Silicon Dioxide (SiO2) and Microchem S1800 Resist Etching Using Oxford 80 Plus RIE(2016-10-06) Azadi, Mohsen; Metzler, Meredith; Lopez, Gerald GThis technical report describes the process of etching silicon dioxide (SiO2) and Microchem S1800 resist using the Oxford 80 Plus Reactive Ion Etch (RIE) system.Publication High Contrast 50kV E-Beam Lithography for HSQ atop Diamond using ESPACER for Spin-On Charge Dissipation(2016-03-11) Grote, Richard R.; Bassett, Lee C.; Lopez, Gerald G.A high contrast HSQ process atop diamond is presented. A water soluable spin-on conductive layer called ESPACER is used as a charge dissipation layer in lieu of a metal thin film.Publication ZEP520A Spin Curves and Dilution Characterization(2016-12-16) Lopez, Gerald GSpin curves for ZEP520A from ZEON Chemicals for the Singh Center for Nanotechnology were studied under non-diluted and diluted conditions by weight.Publication MicroChem S1800 Series Resist Application onto Si(2016-02-18) Wood, Steven; LOPEZ, GERALD GThe Quattrone Nanofabrication Facility standard operating procedure for the application of MicroChem S1800 series resist onto an Si wafer is provided in this document.