Zuniga, Chiara
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Publication Ultra-Thin-Film AlN Contour-Mode Resonators for Sensing Applications(2010-04-01) Rinaldi, Matteo; Zuniga, Chiara; Piazza, GianlucaThis paper reports on the design and experimental verification of a new class of ultra-thin-film (250 nm) aluminum nitride (AlN) microelectromechanical system (MEMS) contour mode resonators (CMRs) suitable for the fabrication of ultra-sensitive gravimetric sensors. The device thickness was opportunely scaled in order to increase the mass sensitivity, while keeping a constant frequency of operation. In this first demonstration the resonance frequency of the device was set to 178 MHz and a mass sensitivity as high as 38.96 KHz⋅μm2/fg was attained. This device demonstrates the unique capability of the CMR-S technology to decouple resonance frequency from mass sensitivity.Publication Super-High-Frequency Two-Port AlN Contour-Mode Resonators for RF Applications(2010-01-01) Rinaldi, Matteo; Zuniga, Chiara; Zuo, Chengjie; Piazza, GianlucaThis paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh- frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contourextensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt^2, in excess of 1.5%. These devices are employed to synthesize the highest frequency MEMS filter (3.7 GHz) based on AlN contour-mode resonator technology ever reported.Publication 5-10 GHz AlN Contour-Mode Nanoelectromechanical Resonators(2009-01-01) Rinaldi, Matteo; Zuniga, Chiara; Piazza, GianlucaThis paper reports on the design and experimental verification of Super High Frequency (SHF) laterally vibrating NanoElctroMechanical (NEMS) resonators. For the first time, AlN piezoelectric nanoresonators with multiple frequencies of operation ranging between 5 and 10 GHz have been fabricated on the same chip and attained the highest f-Q product (4.6E12 Hz) ever reported in AlN contour-mode devices. These piezoelectric NEMS resonators are the first of their class to demonstrate on-chip sensing and actuation of nanostructures without the need of cumbersome or power consuming excitation and readout systems. Effective piezoelectric activity has been demonstrated in thin AlN films having vertical and lateral features in the range of 250 nm.Publication Use of a Single Multiplexed CMOS Oscillator as Direct Frequency Read-Out for an Array of Eight AlN Contour-Mode NEMS Resonant Sensors(2010-11-01) Rinaldi, Matteo; Zuniga, Chiara; Duick, Brandon; Piazza, GianlucaThis paper reports on the first demonstration of a single multiplexed CMOS oscillator circuit employed as direct frequency readout for an array of 8 nanoscaled aluminum nitride Contour-Mode Resonant Sensors (CMR-S). In this first prototype 8 thin-film (250 nm) AlN CMR-S operating at 186 MHz were fabricated on the same chip and simultaneously wire-bonded to a Pierce-like oscillator circuit (fabricated in the ON Semiconductor 0.5 µm CMOS process) by means of 8 CMOS transmission gates addressed via a 3 bit on-chip decoder. The 8 CMR-S were simultaneously exposed to different concentrations of methanol (0.1–1% of the saturated vapor pressure) and their response was monitored in a time-multiplexed mode. Frequency shifts of 300 Hz corresponding to changes of mass per unit area of 7 ag/µm2 were experimentally detected. Values of phase noise derived Allan deviation as low as 0.9 Hz were measured. Such Allan deviation translates in an estimated limit of detection of 21 zg/µm2.Publication ss-DNA Functionalized Ultra-Thin-Film AlN Contour-Mode Resonators with Self-Sustained Oscillator for Volatile Organic Chemical Detection(2010-01-01) Rinaldi, Matteo; Duick, Brandon; Zuniga, Chiara; Zuo, Chengjie; Piazza, GianlucaThis paper reports on the design and experimental verification of a new class of nanoscale gravimetric sensors based on ultra-thin-film AlN Contour-Mode Resonant Sensor (CMR-S) functionalized with ss-DNA and connected to a chip-based self-sustaining oscillator loop (fabricated in the ON Semiconductor 0.5 μm CMOS process) for direct frequency read-out. The 220 MHz oscillator based on the ultra-thin AlN CMR-S exhibits an Allan Variance of ∼20 Hz for 100 ms gate time. The sensor affinity for the adsorption of volatile organic chemicals such as 2,6 dinitroluene (DNT, a simulant for explosive vapors) is enhanced by functionalizing the top gold electrode of the device with a thiol-terminated single stranded DNA sequence (Thiol - 5’ CTT CTG TCT TGA TGT TTG TCA AAC 3’) enabling the detection of concentrations as low as 1.5 part per billion (ppb).Publication High Frequency Piezoelectric Resonant Nanochannel for Bio-Sensing Applications in Liquid Environment(2010-11-01) Zuniga, Chiara; Rinaldi, Matteo; Piazza, GianlucaThis paper reports on the first demonstration of a 457 MHz AlN Piezolectric Resonant Nanochannel (PRN) for biosensing applications in liquid environment. A novel process consisting of 7 lithographic steps was developed to fabricate the PRN. The new resonant device shows an unchanged value of the electromechanical coupling, kt 2 (about 0.8 %), whether the channel is filled with air or water and a quality factor, Q, in liquid of approximately 170. The value of kt 2 and Q are respectively about 2.7 and 2 times the ones recorded for conventional laterally vibrating AlN Contour Mode Resonant Sensors (CMR-Ss) submerged in water. Overall, these results translate in a ~ 5 fold enhancement in the figure of merit (kt 2 - Q product) of the resonant device when operated in liquid and simultaneously permit the efficient delivery of ultra-low concentrations of fluid samples directly on the surface of the sensor.Publication AlN Contour-Mode Resonators for Narrow-Band Filters above 3 GHz(2009-04-20) Rinaldi, Matteo; Zuniga, Chiara; Zuo, Chengjie; Piazza, GianlucaThis paper reports on the design and experimental verification of a new class of thin-film (250 nm) super high frequency (SHF) laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions in order to excite a contour-extensional mode of vibration in nano features of an ultra-thin (250 nm) aluminum nitride (AlN) film. In this first demonstration two-port resonators vibrating up to 4.5 GHz were fabricated on the same die and attained electromechanical coupling, kt^2, in excess of 1.5 %. These devices were employed to synthesize the highest frequency ever reported MEMS filter (3.7 GHz) based on AlN contour-mode resonator (CMR) technology.Publication Gravimetric chemical sensor based on the direct integration of SWNTS on ALN Contour-Mode MEMS resonators(2008-05-01) Rinaldi, Matteo; Zuniga, Chiara; Sinha, Nipun; Taheri, Marzie; Piazza, Gianluca; Khamis, Samuel M.; Johnson, Alan T.This paper reports on the first demonstration of a gravimetric chemical sensor based on direct integration of Single Wall Carbon Nanotubes (SWNTs) grown by Chemical Vapor Deposition (CVD) on AlN Contour-Mode MicroElectroMechanical (MEMS) resonators. In this first prototype the ability of SWNTs to readily adsorb volatile organic chemicals has been combined with the capability of AlN Contour-Mode MEMS resonator to provide for different levels of sensitivity due to separate frequencies of operation on the same die. Two devices with resonance frequencies of 287 MHz and 442 MHz have been exposed to different concentrations of DMMP in the range from 80 to 800 ppm. Values of mass sensitivity equal to 1.8 KHz/pg and 2.65 KHz/pg respectively have been measured.Publication Nanoenabled microelectromechanical sensor for volatile organic chemical detection(2009-06-05) Zuniga, Chiara; Rinaldi, Matteo; Khamis, Samuel M.; Johnson, A. T.; Piazza, GianlucaA nanoenabled gravimetric chemical sensor prototype based on the large scale integration of single-stranded DNA (ss-DNA) decorated single-walled carbon nanotubes (SWNTs) as nanofunctionalization layer for aluminum nitride contour-mode resonant microelectromechanical (MEM) gravimetric sensors has been demonstrated. The capability of two distinct single strands of DNA bound to SWNTs to enhance differently the adsorption of volatile organic compounds such as dinitroluene (simulant for explosive vapor) and dymethyl-methylphosphonate (simulant for nerve agent sarin) has been verified experimentally. Different levels of sensitivity (17.3 and 28 KHz µm^2/fg) due to separate frequencies of operation (287 and 450 MHz) on the same die have also been shown to prove the large dynamic range of sensitivity attainable with the sensor. The adsorption process in the ss-DNA decorated SWNTs does not occur in the bulk of the material, but solely involves the surface, which permits to achieve 50% recovery in less than 29 s.Publication Ultra-Thin Super High Frequency Two-Port ALN Contour-Mode Resonators and Filters(2009-06-21) Rinaldi, Matteo; Zuniga, Chiara; Zuo, Chnegjie; Piazza, GianlucaThis paper reports on the demonstration of a new class of ultra-thin (250 nm thick) super high frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very narrow bandwidth (~ 0.35%) and high off-band rejection (~ 35 dB) were achieved at an operating frequency of 1.96 GHz. This first prototype showed insertion loss of 11 dB, which can be improved to few dB if parasitic elements are eliminated or device capacitance is increased.